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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/10503

タイトル: Fabrication of a submicron-channel organic field-effect transistor using a controllable electrospun single fibre as a shadow mask
著者: Ishii, Y
Sakai, H
Murata, H
キーワード: organic field-effect transistor
electrospun single fibre
electrospinning
mask
発行日: 2011-03-28
出版者: IOP Publishing
誌名: Nanotechnology
巻: 22
号: 20
開始ページ: 205202
終了ページ: 205207
DOI: 10.1088/0957-4484/22/20/205202
抄録: We demonstrate a simple and versatile method for the fabrication of a submicron channel for an organic field-effect transistor (OFET) using a single electrospun fibre as a shadow mask. A single electrospun fibre is produced by an alternative switching electrospinning method and is stretched 2.5-fold. The average diameter of the stretched fibres is 302 nm. The stretched fibre is placed on ultrathin dielectric layers of aluminium oxide and a self-assembled monolayer (SAM). The fibre acts as a very small shadow mask during electrode deposition. After removing the fibre, electrodes with very narrow gaps of around 350 nm and with high uniformity are easily obtained. We fabricate an OFET by depositing pentacene as an active layer onto the electrodes. The OFET is operable at low voltages, with a threshold voltage of -1.1 V and a sub-threshold swing of 0.27 V decade ^<-1>, which are one order of magnitude lower than values obtained with a channel length of 75 μm.
Rights: Copyright (C) 2011 IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in “Y Ishii, H Sakai, and H Murata, Nanotechnology, 22(20), 2011, 205202-205207”. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher-authenticated version is available online at http://dx.doi.org/10.1088/0957-4484/22/20/205202
URI: http://hdl.handle.net/10119/10503
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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