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| Title: | Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature-grown GaAs layers |
| Authors: | Mohamed, Mohd Ambri
Lam, Pham Tien
Bae, K. W.
Otsuka, N. |
| Keywords: | cooperative transition
electronic states of antisite As
low-temperature-grown GaAs |
| Issue Date: | 2011-12-28 |
| Publisher: | American Institute of Physics |
| Magazine name: | Journal of Applied Physics |
| Volume: | 110 |
| Number: | 12 |
| Start page: | 123716-1 |
| End page: | 123716-7 |
| DOI: | 10.1063/1.3671059 |
| Abstract: | Magnetic properties resulting from localized spins associated with antisite arsenic ions As^+_<Ga> in Be-doped low-temperature-grown GaAs (LT-GaAs) layers were studied by measuring the magnetization of lift-off samples. With fast cooling, the magnetization of samples at 1.8 K becomes significantly lower than that expected from Curie-type paramagnetism in the range of the applied field to 7 T, and a transition from low magnetization to the magnetization of paramagnetism occurs upon the heating of samples to 4.5 K. With slow cooling, on the other hand, samples have a paramagnetic temperature dependence throughout the measurement-temperature range. The magnetization was found to decrease monotonically when a sample was kept at a fixed low temperature. These observations are explained by the cooperative transition of electron states of As_<Ga> defects, which is closely related to the normal-metastable state transition of EL2 defects in semi-insulating GaAs. The results of the magnetization measurements in the present study suggest that As^+<Ga> ions are spontaneously displaced at low temperature without photoexcitation in Be-doped LT-GaAs. The similarity of the transition observed in this system to the normal-metastable state transition of the EL2 defect was also suggested by first-principle calculations of the electron state of an As_<Ga> defect with a doped Be atom. |
| Rights: | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mohd Ambri Mohamed, Pham Tien Lam, K. W. Bae, and N. Otsuka, Journal of Applied Physics, 110(12), 123716 (2011) and may be found at http://link.aip.org/link/doi/10.1063/1.3671059 |
| URI: | http://hdl.handle.net/10119/10610 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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