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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10676
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タイトル: | Polycrystalline Silicon Films with Nanometer-Sized Dense Fine Grains Formed by Flash-Lamp-Induced Crystallization |
著者: | Ohdaira, Keisuke Ishii, Shohei Tomura, Naohito Matsumura, Hideki |
キーワード: | flash lamp annealing crystallization polycrystalline silicon thin-film solar cell nanometer-sized grains |
発行日: | 2012-01-01 |
出版者: | American Scientific Publishers |
誌名: | Journal of Nanoscience and Nanotechnology |
巻: | 12 |
号: | 1 |
開始ページ: | 591 |
終了ページ: | 595 |
DOI: | 10.1166/jnn.2012.5342 |
抄録: | Flash lamp annealing (FLA) with millisecond-order pulse duration can crystallize μm-order-thick a-Si films on glass substrates through explosive crystallization (EC), and flash-lamp-crystallized (FLC) poly-Si films consist of densely-packed nanometer-sized fine grains. We investigate the impact of the hydrogen concentration and the defect density of precursor a-Si films on crystallization mechanism and the microstructures of FLC poly-Si films, by comparing chemical-vapor-deposited (CVD) and sputtered precursor a-Si films. Transmission electron microscopy (TEM) observation reveals that FLC poly-Si films with similar periodic microstructures are formed by the FLA of the two kinds of precursor films, meaning no significant influence of hydrogen atoms and defect density on crystallization mechanism. This high flexibility of the properties of precursor a-Si films would contribute to a wide process window to reproducibly form FLC poly-Si films with the particular periodic microstructures. |
Rights: | This is the author's version of the work. It is posted here by permission of American Scientific Publishers. Copyright (C) 2012 American Scientific Publishers. Keisuke Ohdaira, Shohei Ishii, Naohito Tomura, and Hideki Matsumura, Journal of Nanoscience and Nanotechnology, 12(1), 2012, 591-595. http://dx.doi.org/10.1166/jnn.2012.5342 |
URI: | http://hdl.handle.net/10119/10676 |
資料タイプ: | author |
出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
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