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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/10836
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| タイトル: | Tunable electronic transport properties of silicon-fullerene-linked nanowires: Semiconductor, conducting wire, and tunnel diode |
| 著者: | Nishio, Kengo
Ozaki, Taisuke
Morishita, Tetsuya
Mikami, Masuhiro |
| キーワード: | Tunable electronic transport properties
silicon-fullerene-linked nanowires
tunnel diodes
conducting wires
semiconductor |
| 発行日: | 2010-03-24 |
| 出版者: | American Physical Society |
| 誌名: | Physical Review B |
| 巻: | 81 |
| 号: | 11 |
| 開始ページ: | 115444-1 |
| 終了ページ: | 115444-11 |
| DOI: | 10.1103/PhysRevB.81.115444 |
| 抄録: | We explore the possibility of controllable tuning of the electronic transport properties of silicon-fullerene-linked nanowires by encapsulating guest atoms into their cages. Our first-principles calculations demonstrate that the guest-free nanowires are semiconductors, and do not conduct electricity. The iodine or sodium doping improves the transport properties, and makes the nanowires metallic. In the junctions of I-doped and Na-doped NWs, the current travels through the boundary by quantum tunneling. More significantly, the junctions have asymmetric I-V_b curves, which could be used as rectifiers. The current-voltage curves are interpreted by band-overlapping models. Tunable electronic transport properties of silicon-fullerene-linked nanowires could find many applications such as field-effect transistors, conducting wires, and tunnel diodes. |
| Rights: | Kengo Nishio, Taisuke Ozaki, Tetsuya Morishita, and Masuhiro Mikami, Physical Review B, 81(11), 2010, 115444. Copyright 2010 by the American Physical Society. http://dx.doi.org/10.1103/PhysRevB.81.115444 |
| URI: | http://hdl.handle.net/10119/10836 |
| 資料タイプ: | publisher |
| 出現コレクション: | z10-10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
サイズ | 形式 |
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| 16293.pdf | | 833Kb | Adobe PDF | 見る/開く |
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