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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/11408
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| タイトル: | Non-equilibrium critical point in Be-doped low-temperature-grown GaAs |
| 著者: | Mohamed, Mohd Ambri
Lam, Pham Tien
Otsuka, N. |
| キーワード: | Non-equilibrium
critical point
low-temperature grown GaAs |
| 発行日: | 2013-02-04 |
| 出版者: | American Institute of Physics |
| 誌名: | Journal of Applied Physics |
| 巻: | 113 |
| 号: | 5 |
| 開始ページ: | 053504-1 |
| 終了ページ: | 053504-7 |
| DOI: | 10.1063/1.4790313 |
| 抄録: | We studied the transition process of antisite arsenic defects in Be-doped low-temperature-grown GaAs layers by measuring the magnetization. This material exhibits bistability at non-equilibrium; at a fixed temperature in a fixed magnetic field a sample relaxes towards two different states, depending on the preceding cooling process. We observed anomalously large magnetization fluctuations in macroscopic samples during the transition from bistability to monostability with gradual change of the temperature. Slowing down of the relaxation of the magnetization is observed as a sample approaches the transition into monostability. Large fluctuations observed from a two-piece sample exhibit intermittent bursts by high-pass filtering and follow a generalized Gumbel probability density distribution. These observations suggest a possibility of the occurrence of a non-equilibrium critical point in this material. Microscopic processes underlying the observed phenomena are discussed with results of first-principles calculations of strain fields. |
| Rights: | Copyright 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mohd Ambri Mohamed, Pham Tien Lam, and N. Otsuka, Journal of Applied Physics, 113(5), 053504 (2013) and may be found at http://dx.doi.org/10.1063/1.4790313 |
| URI: | http://hdl.handle.net/10119/11408 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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