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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/11596
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| タイトル: | Controllable threshold voltage of a pentacene field-effect transistor based on a double-dielectric Structure |
| 著者: | Dao, Toan Thanh
Matsushima, Toshinori
Friedlein, Rainer
Murata, Hideyuki |
| キーワード: | Fullerene transistor
Nonvolatile memory transistor
Floating-gate effect
Electron-trapping polymer |
| 発行日: | 2013-05-06 |
| 出版者: | Elsevier |
| 誌名: | Organic Electronics |
| 巻: | 14 |
| 号: | 8 |
| 開始ページ: | 2007 |
| 終了ページ: | 2013 |
| DOI: | 10.1016/j.orgel.2013.04.045 |
| 抄録: | We report for the first time organic n-type nonvolatile memory transistors based on a fullerene (C_<60>) semiconductor and an electron-trapping polymer, poly(perfluoroalkenyl vinyl ether) (CYTOP). The transistors with a Si++/SiO_2/CYTOP/C_<60>/Al structure show good n-type transistor performance with a threshold voltage (V_<th>) of 2.8 V and an electron mobility of 0.4 cm^2 V^<-1> s^<-1>. Applying gate voltages of 50 or -45 V for about 0.1 s to the devices induces the reversible shifts in their transfer characteristics, which results in a large memory window (△V_<th>) of 10 V. A memory on/off ratio of 10^5 at a small reading voltage below 5 V and a retention time greater than 10^5 s are achieved. The memory effect in the transistor is ascribed to trapped electrons at the CYTOP/SiO_2 interface. Because of the use of high-electron-mobility C_<60>, the switching voltages of our memory transistors become significantly lower than those of conventional memory transistors based on pentacene. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Toan Thanh Dao, Toshinori Matsushima, Rainer Friedlein, Hideyuki Murata, Organic Electronics, 14(8), 2013, 2007-2013, http://dx.doi.org/10.1016/j.orgel.2013.04.045 |
| URI: | http://hdl.handle.net/10119/11596 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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| 19613.pdf | | 759Kb | Adobe PDF | 見る/開く |
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