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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/12159
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| Title: | Preparation of Ruthenium Metal and Ruthenium Oxide Thin Films by a Low-Temperature Solution Process |
| Authors: | Murakami, Yoshitaka
Tue, Phan Trong
Tsukada, Hirokazu
Li, Jinwang
Shimoda, Tatsuya |
| Keywords: | Ru/RuO2
Thin film
Solution process
Low temperature
Flexible |
| Issue Date: | Dec-2013 |
| Publisher: | ITE and SID |
| Abstract: | Highly conductive ruthenium metal thin films and ruthenium oxide ones were prepared by a solution process at low temperature (e.g., 6.9 × 10^<-5> Ωcm at 300°C for Ru^0). Their structure and electric properties depend on the annealing conditions. The process allowed us to fabricate ruthenium electrodes on flexible substrates. |
| Language: | eng |
| URI: | http://hdl.handle.net/10119/12159 |
| Appears in Collections: | z8-11-1. 会議発表論文・発表資料 (Conference Papers)
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Description |
Size | Format |
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| 20106.pdf | | 1695Kb | Adobe PDF | View/Open |
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