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FY 2015 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/13698
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| Title: | パワー半導体への適用を目指した液体プロセスによるSiC膜の研究 |
| Other Titles: | Solution-processed SiC Films and Its Application to Power Devices |
| Authors: | 井上, 聡 |
| Authors(alternative): | Inoue, Satoshi |
| Keywords: | Silicon carbide
Solution process
Power device
Liquid material
Contact resistance |
| Issue Date: | 1-Jun-2016 |
| Abstract: | 液体シリコン材料と液体カーボン材料を原料としてSiC-inkを合成し、それを用いて成膜したSiC膜の物性評価とデバイスへの応用を検討した。液相蒸着法によりp型Si膜を作製し、IPES法によりCBMを、PYS法によりVBMを測定したところ、SiC-inkにおけるカーボン材料比率の増大に伴い、CBMとVBMそれぞれがBand Gapの増大する方向にシフトすることが確認された。このSiC膜を用いることで、SiCパワーデバイスにおけるPchコンタクト部の抵抗を低減することが可能になる。 : We developed the SiC-ink using liquid silicon material and liquid carbon material, and investigated a possibility of its application to power devices. The SiC films were deposited by using the SiC-ink and LVD (liquid vapor deposition) method. The CBM (conduction band minima) and VBM (valence band maxima) were evaluated by the IPES (inverse photoemission spectroscopy) and PYS (photon yield spectroscopy), respectively. As a result, it was confirmed that CBM and VBM were controlled by the carbon ratio in the SiC-ink. Both CBM and VBM shifted with the increase of the carbon ratio so that the band-gap increased. These data indicate that the contact resistance between Ni electrode and P+-SiC region can be reduced by using the SiC film fabricated by SiC-ink. The CTLM-TEG was fabricated to measure the contact resistance between Ni electrode and P+-SiC film using SiC-ink, and the contact resistance of 1.01×10-7Ωcm2 was realized. |
| Description: | 挑戦的萌芽研究
研究期間：2014～2015
課題番号：26630127
研究者番号：60553237
研究分野：電子デバイス |
| Language: | jpn |
| URI: | http://hdl.handle.net/10119/13698 |
| Appears in Collections: | 2015年度 (FY 2015)
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Files in This Item:
| File |
Description |
Size | Format |
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| 26630127seika.pdf | | 407Kb | Adobe PDF | View/Open |
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