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Please use this identifier to cite or link to this item: http://hdl.handle.net/10119/14201

Title: AlTiO絶縁膜を用いた低誘電率基板上InAsチャネルFETの作製
Authors: 森, 涼介
Authors(alternative): もり, りょうすけ
Keywords: 異種材料融合集積
族化合物半導体
high-k 絶縁体
heterogeneous integrationⅢ-Ⅴ
III-V compound semiconductor
high-k insulator
Issue Date: Mar-2017
Description: Supervisor: 鈴木 寿一
マテリアルサイエンス研究科
修士
Title(English): Fabrication of InAs channel FET using AlTiO insulator on low-k substrates
Authors(English): Mori, Ryousuke
Language: jpn
URI: http://hdl.handle.net/10119/14201
Appears in Collections:M-MS. 2016年度(H28) (Jun.2016 - Mar.2017)

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