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http://hdl.handle.net/10119/14201
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Title: | AlTiO絶縁膜を用いた低誘電率基板上InAsチャネルFETの作製 |
Authors: | 森, 涼介 |
Authors(alternative): | もり, りょうすけ |
Keywords: | 異種材料融合集積 族化合物半導体 high-k 絶縁体 heterogeneous integrationⅢ-Ⅴ III-V compound semiconductor high-k insulator |
Issue Date: | Mar-2017 |
Description: | Supervisor: 鈴木 寿一 マテリアルサイエンス研究科 修士 |
Title(English): | Fabrication of InAs channel FET using AlTiO insulator on low-k substrates |
Authors(English): | Mori, Ryousuke |
Language: | jpn |
URI: | http://hdl.handle.net/10119/14201 |
Appears in Collections: | M-MS. 2016年度(H28) (Jun.2016 - Mar.2017)
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