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Master of Science（Materials Science） >
H28) (Jun.2016 - Mar.2017 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/14201
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| Title: | AlTiO絶縁膜を用いた低誘電率基板上InAsチャネルFETの作製 |
| Authors: | 森, 涼介 |
| Authors(alternative): | もり, りょうすけ |
| Keywords: | 異種材料融合集積
族化合物半導体
high-k 絶縁体
heterogeneous integrationⅢ-Ⅴ
III-V compound semiconductor
high-k insulator |
| Issue Date: | Mar-2017 |
| Description: | Supervisor: 鈴木 寿一
マテリアルサイエンス研究科
修士 |
| Title(English): | Fabrication of InAs channel FET using AlTiO insulator on low-k substrates |
| Authors(English): | Mori, Ryousuke |
| Language: | jpn |
| URI: | http://hdl.handle.net/10119/14201 |
| Appears in Collections: | M-MS. 2016年度(H28) (Jun.2016 - Mar.2017)
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