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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/14706
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| タイトル: | Application of crystalline silicon surface oxidation to silicon heterojunction solar cells |
| 著者: | Oikawa, Takafumi
Ohdaira, Keisuke
Higashimine, Koichi
Matsumura, Hideki |
| キーワード: | Heterojunction solar cell
Ultra-thin SiOx layer
Cat-CVD
Passivation
Epitaxial growth |
| 発行日: | 2015-07-07 |
| 出版者: | Elsevier |
| 誌名: | Current Applied Physics |
| 巻: | 15 |
| 号: | 10 |
| 開始ページ: | 1168 |
| 終了ページ: | 1172 |
| DOI: | 10.1016/j.cap.2015.07.004 |
| 抄録: | We study the effect of ultra-thin oxide (SiO_x) layers inserted at the interface of silicon heterojunction (SHJ) solar cells on their open-circuit voltage (V_<OC>). The SiO_x layers can be easily formed by dipping c-Si into oxidant such as hydrogen peroxide (H_2O_2) and nitric acid (HNO_3). We confirm the prevention of the undesirable epitaxial growth of Si layers during the deposition of a-Si films by the insertion of the ultra-thin SiO_x layers. The formation of the SiO_x layers by H_2O_2 leads to better effective minority carrier lifetime (τ_<eff>) and V_<OC> than the case of using HNO_3. c-Si with the ultra-thin SiO_x layers formed by H_2O_2 dipping, prior to deposition of a-Si passivation layers, can have high implied V_<OC> of up to ～0.714 V. |
| Rights: | Copyright (C)2015, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Takafumi Oikawa, Keisuke Ohdaira, Koichi Higashimine, Hideki Matsumura, Current Applied Physics, 15(10), 2015, 1168-1172, http://dx.doi.org/10.1016/j.cap.2015.07.004 |
| URI: | http://hdl.handle.net/10119/14706 |
| 資料タイプ: | author |
| 出現コレクション: | z8-10-1. 雑誌掲載論文 (Journal Articles)
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