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Doctor of Philosophy(Materials Science) >
H29) (Jun.2017 - Mar.2018 >
Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/15327
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| Title: | GaAs(111)B上に分子線エピタキシャル成長したMnAs/Ⅲ-As複合構造の横型スピントロニクス素子応用 |
| Authors: | Islam, Md. Earul |
| Authors(alternative): | いすらむ, えむでぃー やーるる |
| Keywords: | Molecular beam epitaxy (MBE) MnAs InAs GaAs(111)B Magnetic properties Electrical properties Lateral spin valve |
| Issue Date: | Mar-2018 |
| Description: | Supervisor: 赤堀 誠志 マテリアルサイエンス研究科 博士 |
| Title(English): | Lateral spintronic device application of molecular beam epitaxial grown MnAs/Ⅲ-As hybrid structures on GaAs(111)B |
| Authors(English): | Islam, Md. Earul |
| Language: | eng |
| URI: | https://hdl.handle.net/10119/15327 |
| Academic Degrees and number: | 甲第1058号 |
| Degree-granting date: | 2018-03-23 |
| Degree name: | 博士(マテリアルサイエンス) |
| Degree-granting institutions: | 北陸先端科学技術大学院大学 |
| Appears in Collections: | D-MS. 2017年度(H29) (Jun.2017 - Mar.2018)
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Files in This Item:
| File |
Description |
Size | Format |
| abstract.pdf | 英文要旨 | 180Kb | Adobe PDF | View/Open | | paper.pdf | 本文 | 4572Kb | Adobe PDF | View/Open | | summary.pdf | 内容の要旨及び論文審査の結果の要旨 | 309Kb | Adobe PDF | View/Open |
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