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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16134
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| タイトル: | Direct observation of changes in the effective minority-carrier lifetime of SiNx-passivated n-type crystalline-silicon substrates caused by potential-induced degradation and recovery tests |
| 著者: | Nishikawa, Naoyuki
Yamaguchi, Seira
Ohdaira, Keisuke |
| キーワード: | Potential-induced degradation
Surface polarization effect
n-type crystalline silicon photovoltaic module
Effective minority-carrier lifetime
Silicon nitride passivation film |
| 発行日: | 2017-11-05 |
| 出版者: | Elsevier |
| 誌名: | Microelectronics Reliability |
| 巻: | 79 |
| 開始ページ: | 91 |
| 終了ページ: | 95 |
| DOI: | 10.1016/j.microrel.2017.10.012 |
| 抄録: | We directly observed reductions in the effective minority-carrier lifetime (τ_<eff>) of n-type crystalline silicon (c-Si) substrates with silicon-nitride passivation films caused by potential-induced degradation (PID). We prepared PID-test samples by encapsulating the passivated substrates with standard photovoltaic-module encapsulation materials. After PID tests applying −1000 V to the c-Si samples from the glass surface, the τ_<eff> was decreased, which probably pertains to Na introduced into the c-Si. After PID tests applying +1000 V, the sample, on the other hand, showed a considerably rapid τ_<eff> reduction, probably associated with the surface polarization effect. We also performed recovery tests of predegraded samples, by applying a bias opposite to that used in a degradation test. The τ_<eff> of a sample predegraded by applying +1000 V was rapidly completely recovered by applying −1000 V, while those of predegraded by applying −1000 V show only slight and insufficient τ_<eff> recovery. |
| Rights: | Copyright (C)2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Naoyuki Nishikawa, Seira Yamaguchi, Keisuke Ohdaira, Microelectronics Reliability, 79, 2017, 91-95, http://dx.doi.org/10.1016/j.microrel.2017.10.012 |
| URI: | http://hdl.handle.net/10119/16134 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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