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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16137
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| タイトル: | Formation of amorphous silicon passivation films with high stability against postannealing, air exposure, and light soaking using liquid silicon |
| 著者: | Guo, Cheng
Ohdaira, Keisuke
Takagishi, Hideyuki
Masuda, Takashi
Shen, Zhongrong
Shimoda, Tatsuya |
| 発行日: | 2016-03-22 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 55 |
| 号: | 4S |
| 開始ページ: | 04ES12-1 |
| 終了ページ: | 04ES12-4 |
| DOI: | 10.7567/JJAP.55.04ES12 |
| 抄録: | We applied liquid-source vapor deposition (LVD), thermal CVD from the vapor of cyclopentasilane (CPS), to form amorphous silicon (a-Si) passivation films on crystalline Si(c-Si) wafers, and investigated the thermal stability of the films against postannealing. LVD a-Si passivation films showed a high initial effective minority carrier lifetime (τ_<eff>) of >300 μs and a higher thermal stability than a reference plasma-enhanced chemical-vapor-deposited (PECVD) sample. The high thermal stability of LVD a-Si passivation films may be attributed to the considerably high deposition temperature of the films at 360 °C or more. LVD a-Si passivation films were sufficiently stable also against air exposure and 1-sun light soaking. We also confirmed that the epitaxial growth of Si films does not occur on c-Si even at such high deposition temperatures, and LVD could realize the simultaneous deposition of a-Si films on both sides of a c-Si wafer. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2016 The Japan Society of Applied Physics. Cheng Guo, Keisuke Ohdaira, Hideyuki Takagishi, Takashi Masuda, Zhongrong Shen and Tatsuya Shimoda, Japanese Journal of Applied Physics, 55(4S), 2016, 04ES12. http://dx.doi.org/10.7567/JJAP.55.04ES12 |
| URI: | http://hdl.handle.net/10119/16137 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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