JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >

このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/16140

タイトル: Degradation behavior of crystalline silicon solar cells in a cell-level potential-induced degradation test
著者: Yamaguchi, Seira
Ohdaira, Keisuke
キーワード: Potential-induced degradation
Reliability test
Crystalline silicon solar cell
Leakage current
発行日: 2017-07-13
出版者: Elsevier
誌名: Solar Energy
巻: 155
開始ページ: 739
終了ページ: 744
DOI: 10.1016/j.solener.2017.07.009
抄録: The degradation behavior of crystalline silicon (c-Si) solar cells in a cell-level potential-induced degradation (PID) test and the effect of the test conditions are reported. The PID tests were performed in a vacuum chamber by applying a voltage of 1000 V from a temperature-controlled aluminum chuck underneath an unlaminated sample stack to the top copper electrode placed on the stack. The stack was composed of soda-lime glass, an ethylene vinyl-acetate copolymer sheet, and a conventional p-type c-Si solar cell. The investigated solar cell exhibited a large degradation of the fill factor and slight degradation of the open-circuit voltage. These degradations were mainly caused by a reduction in the parallel resistance, which is the same degradation behavior as that reported previously. This indicates that the cell-level PID test well reproduces the typical degradation behavior. However, the leakage current in the unlaminated sample stack at a relatively low temperature exhibited a different temperature dependence from that in a laminated sample stack. The difference in the temperature dependence was caused by temperature-dependent contact resistances within the unlaminated sample stacks. This indicates that there is a difference between the temperature dependences in cell-level and module-level PID tests. This difference in the temperature dependence was reduced by the use of a heavier top electrode. These findings may assist in choosing the proper test conditions for this kind of cell-level PID test. A cell-level PID test for an n-type front-emitter c-Si solar cell was also performed. A typical degradation behavior, characterized by reductions in the open-circuit voltage and the short-circuit current, was observed, which implies that this test can be widely applied to PID phenomena occurring in many kinds of solar cells.
Rights: Copyright (C)2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author’s version of a work accepted for publication by Elsevier. Changes resulting from the publishing process, including peer review, editing, corrections, structural formatting and other quality control mechanisms, may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Seira Yamaguchi, Keisuke Ohdaira, Solar Energy, 155, 2017, 739-744, http://dx.doi.org/10.1016/j.solener.2017.07.009
URI: http://hdl.handle.net/10119/16140
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

このアイテムのファイル:

ファイル 記述 サイズ形式
3026.pdf291KbAdobe PDF見る/開く

当システムに保管されているアイテムはすべて著作権により保護されています。

 


お問い合わせ先 : 北陸先端科学技術大学院大学 研究推進課図書館情報係