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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/16220
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| タイトル: | Crystallization of electron beam evaporated a-Si films on textured glass substrates by flash lamp annealing |
| 著者: | Kurata, Keisuke
Ohdaira, Keisuke |
| 発行日: | 2019-03-05 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 58 |
| 号: | SB |
| 開始ページ: | SBBF10-1 |
| 終了ページ: | SBBF10-5 |
| DOI: | 10.7567/1347-4065/aafb51 |
| 抄録: | We investigate the crystallization of amorphous silicon (a-Si) films, by flash lamp annealing (FLA), formed by electron beam (EB) evaporation on textured glass substrates. We confirmed that EB-evaporated a-Si films formed on textured glass can be crystallized by FLA. Optical reflectance on EB-evaporated a-Si can be reduced by using the texture glass, leading to a reduction in the fluence of a FL pulse required for the crystallization. The fluence of a FL pulse for the crystallization of EB-evaporated a-Si films tends to increase with temperature during the EB evaporation of a-Si films. The pre-existing crystal grains in precursor Si films may affect the mechanism of their crystallization. The usage of textured glass substrates leads the formation of polycrystalline Si (poly-Si) films with fine grains. This may results from the prevention of lateral thermal growth and the suppression of explosive crystallization (EC). Unlike in the case of the crystallization of EB-evaporated a-Si films on flat glass substrates, poly-Si films formed on textured glass substrates are not cracked. This may be due to the change in the suppression of the emergence of EC. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2019 The Japan Society of Applied Physics. Keisuke Kurata and Keisuke Ohdaira, Japanese Journal of Applied Physics, 58(SB), 2019, SBBF10-1-SBBF10-5. http://dx.doi.org/10.7567/1347-4065/aafb51 |
| URI: | http://hdl.handle.net/10119/16220 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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