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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/17051
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タイトル: | Improvement in the passivation quality of catalytic-chemical-vapor-deposited silicon nitride films on crystalline Si at room temperature |
著者: | Miyaura, Jun'ichiro Ohdaira, Keisuke |
キーワード: | Silicon nitride Catalytic chemical vapor deposition Passivation Crystalline silicon Solar cell |
発行日: | 2019-02-07 |
出版者: | Elsevier |
誌名: | Thin Solid Films |
巻: | 674 |
開始ページ: | 103 |
終了ページ: | 106 |
DOI: | 10.1016/j.tsf.2019.02.006 |
抄録: | We observe an improvement in the passivation quality of silicon nitride (SiN_x) films formed on crystalline silicon wafers by catalytic chemical vapor deposition (Cat-CVD) under the storage at room temperature. Fluorescent light illumination enhances the improvement in the passivation quality of Cat-CVD SiN_x films, although the passivation quality is also improved in the dark. We do not see any change of bonding configurations in the SiN_x films by the storage at room temperature. Capacitance–voltage measurement reveals that an increase in positive charge density in the SiN_x films improves their passivation quality. The improvement in the passivation quality of SiN_x films is observed for SiN_x films deposited at various substrate temperatures, and SiN_x films deposited at higher temperature tends to show more significant improvement in the passivation quality. |
Rights: | Copyright (C)2019, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Jun'ichiro Miyaura, and Keisuke Ohdaira, Thin Solid Films, 674, 2019, 103-106, http://dx.doi.org/10.1016/j.tsf.2019.02.006 |
URI: | http://hdl.handle.net/10119/17051 |
資料タイプ: | author |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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