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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/18021
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タイトル: | Influence of light illumination on the potential-induced degradation of n-type interdigitated back-contact crystalline Si photovoltaic modules |
著者: | Xu, Yuansong Masuda, Atsushi Ohdaira, Keisuke |
発行日: | 2021-02-03 |
出版者: | IOP Publishing |
誌名: | Japanese Journal of Applied Physics |
巻: | 60 |
号: | SB |
開始ページ: | SBBF08 |
DOI: | 10.35848/1347-4065/abd9cf |
抄録: | We investigate the potential-induced degradation (PID) of n-type interdigitated back-contact (IBC) crystalline Si (c-Si) photovoltaic (PV) modules under a negative bias stress and the influence of light illumination on the PID. IBC PV modules show PID characterized by reductions in short-circuit current density (J_<sc>) and open-circuit voltage (V_<oc>) under negative bias stress, while no fill factor (FF) reduction is observed. The degradation may originate from sodium (Na) introduction into c-Si and resulting enhancement of carrier recombination on the surface of the IBC cells. 1-sun light illumination during the negative-bias PID test results in less severe reductions in J_<sc> and V_<oc>. A reduction in an electric field in the surface Si nitride (SiN_x) film due to carrier generation in the SiN_x and resulting increase in its conductivity is one of the possible explanations for the mitigation of the Na-related PID. |
Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2021 The Japan Society of Applied Physics. Yuansong Xu, Atsushi Masuda and Keisuke Ohdaira, Japanese Journal of Applied Physics, 60(SB), 2021, SBBF08. https://doi.org/10.35848/1347-4065/abd9cf |
URI: | http://hdl.handle.net/10119/18021 |
資料タイプ: | author |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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