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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/18022
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| タイトル: | Tunnel Nitride Passivated Contacts for Silicon Solar Cells Formed by Cat-CVD |
| 著者: | Wen, Yuli
Tu, Huynh Thi Cam
Ohdaira, Keisuke |
| 発行日: | 2021-02-04 |
| 出版者: | IOP Publishing |
| 誌名: | Japanese Journal of Applied Physics |
| 巻: | 60 |
| 号: | SB |
| 開始ページ: | SBBF09 |
| DOI: | 10.35848/1347-4065/abdccd |
| 抄録: | An ultra-thin silicon nitride (SiN_x) layer formed by catalytic chemical vapor deposition (Cat-CVD) is used to replace the Si dioxide (SiO_2) layer of a tunnel oxide passivated contact (TOPCon) solar cell. The passivation quality of crystalline Si (c-Si) with a stack of the ultra-thin SiN_x and n-type hydrogenated amorphous Si (a-Si:H) or microcrystalline Si (µc-Si:H), also formed by Cat-CVD, is significantly improved by annealing at 850 °C, probably due to the formation of a back surface field (BSF) layer. Cat-CVD SiN_x with thicknesses of up to 2.5 nm can have sufficient tunneling conduction. The ultra-thin SiN_x having functions of surface passivation and carrier tunneling, and the unification of the formation method for the tunnel SiN_x and conductive layers will lead to the realization of tunnel nitride passivated contact (TNPCon) solar cells. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2021 The Japan Society of Applied Physics. Yuli Wen, Huynh Thi Cam Tu and Keisuke Ohdaira, Japanese Journal of Applied Physics, 60(SB), 2021, SBBF09. https://doi.org/10.35848/1347-4065/abdccd |
| URI: | http://hdl.handle.net/10119/18022 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| 3419.pdf | | 1259Kb | Adobe PDF | 見る/開く |
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