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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/18072
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タイトル: | Influence of emitter position of silicon heterojunction photovoltaic solar cell modules on their potential-induced degradation behaviors |
著者: | Yamaguchi, Seira Yamamoto, Chizuko Ohshita, Yoshio Ohdaira, Keisuke Masuda, Atsushi |
キーワード: | Potential-induced degradation Photovoltaic module Silicon heterojunction solar cell Reliability Acceleration test |
発行日: | 2020-08-14 |
出版者: | Elsevier |
誌名: | Solar Energy Materials and Solar Cells |
巻: | 216 |
開始ページ: | 110706 |
DOI: | 10.1016/j.solmat.2020.110716 |
抄録: | Potential-induced degradation (PID)-test results of modules fabricated from the rear- and front-emitter silicon heterojunction (SHJ) solar cells were compared to clarify the influence of the emitter position of SHJ photovoltaic (PV) cell modules on their PID behaviors. The PID tests were performed by applying a bias of −2000 V to the shorted interconnector ribbons from the front surface of the cover glass, at 85 °C. In the initial stage, both modules showed the same degradation characterized by a reduction in the short-circuit current density (J_<sc>). After the firststage degradation, the rear-emitter SHJ PV modules exhibited subsequent degradation characterized by a significant reduction in the J_<sc> and open-circuit voltage (V_<oc>), due to the enhancement of the minority-carrier recombination in the front surface region of the n-type crystalline silicon base. The front-emitter SHJ PV modules, on the other hand, showed a reduction in the fill factor (FF), in addition to moderate reductions in J_<sc> and V_<oc>. The FF reduction of the front-emitter SHJ PV modules is considered to be caused by the enhancement of the recombination in the front surface region of the n-type crystalline-silicon base as the region corresponds to the pn junction interface of the front-emitter configuration. The moderate reductions in both J_<sc> and V_<oc> may be due to further progression of the first-stage degradation. These findings are essential for understanding the mechanism of PID in SHJ PV cell modules. |
Rights: | Copyright (C)2020, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Seira Yamaguchi, Chizuko Yamamoto, Yoshio Ohshita, Keisuke Ohdaira, Atsushi Masuda, Solar Energy Materials and Solar Cells, 216, 2020, 110706, https://doi.org/10.1016/j.solmat.2020.110716 |
URI: | http://hdl.handle.net/10119/18072 |
資料タイプ: | author |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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