JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >

このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/18178

タイトル: Effect of temperature and pre-annealing on the potential-induced degradation of silicon heterojunction photovoltaic modules
著者: Xu, Jiaming
HUYNH, Tu Thi Cam
Masuda, Atsushi
Ohdaira, Keisuke
キーワード: potential-induced degradation
photovoltaic module
silicon heterojunction solar cell
water
発行日: 2022-02-11
出版者: IOP Publishing
誌名: Japanese Journal of Applied Physics
巻: 61
号: SC
開始ページ: SC1021-1
終了ページ: SC1021-6
DOI: 10.35848/1347-4065/ac3f6e
抄録: We investigate the effect of temperature and pre-annealing on the potential-induced degradation (PID) of silicon heterojunction (SHJ) photovoltaic (PV) modules. SHJ PV modules show a faster decrease in short-circuit current density (Jsc) at higher temperatures during PID tests. We also observe a complex relationship between the degree of the Jsc decrease and temperature during the PID tests. Pre-annealing before the PID tests at sufficiently high temperatures leads to the complete suppression of the PID of SHJ PV modules. The decrease in Jsc is known to be due to the chemical reduction of indium (In) in transparent conductive oxide (TCO) films in SHJ cells, in which water (H_2O) in SHJ modules is involved. These indicate that H_2O may out-diffuse from the SHJ PV modules during a PID test or pre-annealing at sufficiently high temperatures, by which the chemical reduction of indium in TCO into metallic In is suppressed.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C)2022 The Japan Society of Applied Physics. Jiaming Xu, Huynh Thi Cam Tu, Atsushi Masuda and Keisuke Ohdaira, Japanese Journal of Applied Physics, 61(SC), 2022, SC1021-1-SC1021-6. https://doi.org/10.35848/1347-4065/ac3f6e
URI: http://hdl.handle.net/10119/18178
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

このアイテムのファイル:

ファイル 記述 サイズ形式
JJAP_SSDM_clean.pdf276KbAdobe PDF見る/開く

当システムに保管されているアイテムはすべて著作権により保護されています。

 


お問い合わせ先 : 北陸先端科学技術大学院大学 研究推進課図書館情報係