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Doctor of Philosophy（Materials Science） >
H11) (Jun.1999 - Mar.2000 >
Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/2087
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| Title: | Ge-GaAsヘテロバレント半導体量子ドット構造の作製と輸送現象の研究 |
| Authors: | 稲田, 貢 |
| Authors(alternative): | いなだ, みつる |
| Keywords: | Ge-GaAsヘテロバレント接合,クーロンブロッケイド,量子ドット
Ge-GaAs heterovalent junction, Coulomb blockade ef |
| Issue Date: | Mar-2000 |
| Description: |
山田省二
材料科学研究科
博士 |
| Title(English): | Fabrication and low temperature hole transport in Ge-GaAs heterovalent lateral narrow junctions |
| Authors(English): | Inada, Mitsuru |
| URI: | https://hdl.handle.net/10119/2087 |
| Appears in Collections: | D-MS. 1999年度(H11) (Jun.1999 - Mar.2000)
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