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Doctor of Philosophy（Materials Science） >
H12) (Jun.2000 - Mar.2001 >
Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/2106
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| Title: | InGaAsベース狭バンドギャップヘテロ接合の分子線エピタキシ成長 |
| Authors: | 牛頭, 信一郎 |
| Authors(alternative): | ごず, しんいちろう |
| Keywords: | 分子線エピタキシ, 歪み緩和層, 逆ステップ歪み緩和層, 変調ドープヘテロ接合, 共鳴トンネルダイオード, ゼロ磁場スピン分離
Molecular Beam Epitaxy, strain relaxation layer, i |
| Issue Date: | Mar-2001 |
| Description: |
山田省二
材料科学研究科
博士 |
| Title(English): | Molecular beam epitaxy growth of InGaAs based narrow band gap heterojunctions |
| Authors(English): | Gozu, Shin-ichiro |
| URI: | https://hdl.handle.net/10119/2106 |
| Appears in Collections: | D-MS. 2000年度(H12) (Jun.2000 - Mar.2001)
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