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http://hdl.handle.net/10119/2106
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Title: | InGaAsベース狭バンドギャップヘテロ接合の分子線エピタキシ成長 |
Authors: | 牛頭, 信一郎 |
Authors(alternative): | ごず, しんいちろう |
Keywords: | 分子線エピタキシ, 歪み緩和層, 逆ステップ歪み緩和層, 変調ドープヘテロ接合, 共鳴トンネルダイオード, ゼロ磁場スピン分離 Molecular Beam Epitaxy, strain relaxation layer, i |
Issue Date: | Mar-2001 |
Description: | 山田省二 材料科学研究科 博士 |
Title(English): | Molecular beam epitaxy growth of InGaAs based narrow band gap heterojunctions |
Authors(English): | Gozu, Shin-ichiro |
URI: | http://hdl.handle.net/10119/2106 |
Appears in Collections: | D-MS. 2000年度(H12) (Jun.2000 - Mar.2001)
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