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Doctor of Philosophy（Materials Science） >
H17) (Jun.2005 - Mar.2006 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/2195
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| Title: | GaAsデルタドープ対構造における局在電子状態の研究 |
| Authors: | 井筒, 康洋 |
| Authors(alternative): | いづつ, やすひろ |
| Keywords: | MBE, 金属絶縁体転移, 局在スピン
MBE, metal-insulator transition, localized spin |
| Issue Date: | Mar-2006 |
| Description: |
Supervisor:大塚 信雄
材料科学研究科
博士 |
| Title(English): | Study of localized electron states in pair delta doped GaAs structures |
| Authors(English): | Idutsu, Yasuhiro |
| Language: | eng |
| URI: | http://hdl.handle.net/10119/2195 |
| Appears in Collections: | D-MS. 2005年度(H17) (Jun.2005 - Mar.2006)
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Files in This Item:
| File |
Description |
Size | Format |
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| 2717abstract.pdf | | 50Kb | Adobe PDF | View/Open |
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