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Master of Science（Materials Science） >
H10) (Jun.1998 - Mar.1999 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/2580
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| Title: | S終端したGaAs上へのGeエピタキシャル成長 |
| Authors: | 藤島, 達也 |
| Authors(alternative): | ふじしま, たつや |
| Keywords: | 酸化膜除去, 硫黄終端, Geエピタキシャル成長, pn反転
prevented oxidation,S-passivated,Ge epitaxial grow |
| Issue Date: | Mar-1999 |
| Description: |
山田省二
材料科学研究科
修士 |
| Title(English): | Ge epitaxial growth on S-passivated GaAs by MBE |
| Authors(English): | Fujishima, Tathuya |
| Language: | jpn |
| URI: | http://hdl.handle.net/10119/2580 |
| Appears in Collections: | M-MS. 1998年度(H10) (Jun.1998 - Mar.1999)
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Files in This Item:
| File |
Description |
Size | Format |
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| 742abstract.pdf | | 66Kb | Adobe PDF | View/Open |
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