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Master of Science（Materials Science） >
H13) (Jun.2001 - Mar.2002 >
Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/2916
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| Title: | GaAsへのGeドーピングとpn接合の研究 |
| Authors: | 八田谷, 洋一 |
| Authors(alternative): | やたがい, よういち |
| Keywords: | エピタキシー, Ge, ドーピング, pn接合
MBE, Ge, doping, pn junction |
| Issue Date: | Mar-2002 |
| Description: |
Supervisor:山田 省二
材料科学研究科
修士 |
| Title(English): | The growth and estimation of Ge doped GaAs film by MBE |
| Authors(English): | Yatagai, Youichi |
| Language: | jpn |
| URI: | https://hdl.handle.net/10119/2916 |
| Appears in Collections: | M-MS. 2001年度(H13) (Jun.2001 - Mar.2002)
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Files in This Item:
| File |
Description |
Size | Format |
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| 1786abstract.pdf | | 24Kb | Adobe PDF | View/Open |
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