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http://hdl.handle.net/10119/3367
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| Title: | Fabrication and Characteristics of C_<84> Fullerene Field-Effect Transistor |
| Authors: | Shibata, K
Kubozono, Y
Kanbara, T
Hosokawa, T
Fujiwara, A
Ito, Y
Shinohara, H |
| Issue Date: | 2004-04 |
| Publisher: | AMERICAN INSTITUTE OF PHYSICS |
| Magazine name: | Applied Physics Letters |
| Volume: | 84 |
| Number: | 14 |
| Start page: | 2572 |
| End page: | 2574 |
| DOI: | 10.1063/1.1695193 |
| Abstract: | Fullerene field-effect transistors (FETs) were fabricated with thin films of C_<84>, which showedn-channel normally-on depletion-type FET characteristics. The C_<84> FET device exhibited the highest mobility, μ, of 2.1×10^<－3> cm^2 V^<－1> s^<－1> among normally-on fullerene FETs. The carrier transport of this FET device can be interpreted as thermally activated hopping transport. Carrier type (n-channel) and transport mechanism (hopping) reflect the electronic properties of the C_<84> molecule. |
| Rights: | Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Kana Shibata, Yoshihiro Kubozono, Takayoshi Kanbara, Tomoko Hosokawa, Akihiko Fujiwara, Yasuhiro Ito and Hisanori Shinohara, Applied Physics Letters 84(14), 2572-2574 (2004) and may be found at http://link.aip.org/link/?apl/84/2572. |
| URI: | http://hdl.handle.net/10119/3367 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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