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http://hdl.handle.net/10119/4020
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| Title: | Output properties of C_<60> field-effect transistors with different source/drain electrodes |
| Authors: | Takahashi, Nobuya
Maeda, Akira
Uno, Koichi
Shikoh, Eiji
Yamamoto, Yoshiyuki
Hori, Hidenobu
Kubozono, Yoshihiro
Fujiwara, Akihiko |
| Issue Date: | 2007-02 |
| Publisher: | AMERICAN INSTITUTE OF PHYSICS |
| Magazine name: | Applied physics letters |
| Volume: | 90 |
| Number: | 8 |
| Start page: | 083503-1 |
| End page: | 083503-3 |
| DOI: | 10.1063/1.2709523 |
| Abstract: | C_<60> field-effect transistors (FETs) have been fabricated with source/drain electrodes of three different materials, indium tin oxide (ITO), Au, and Pt. High field-effect mobility μ_<FE> of FETs with ITO electrodes, 1.6×10^<-1> cm^2 /V s, shows that ITO is a potential material for the electrodes of organic electronics. Although the highest Schottky barrier and the lowest μ_<FE> were expected,μ_<FE> of FET with Pt electrodes (1.4×10^<-1> cm^2/V s) is higher than that of FET with Au electrodes (9.6×10^<-2> cm^2/V s). The result suggests that modification of local electronic structure at the interface between electrodes and C_<60> affects device performance. |
| Rights: | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Nobuya Takahashi, Akira Maeda, Koichi Uno, Eiji Shikoh, Yoshiyuki Yamamoto, and Hidenobu Hori, Applied Physics Letters 90(8), 083503 (2007) and may be found at http://link.aip.org/link/?apl/90/083503. |
| Type: | Article |
| URI: | http://hdl.handle.net/10119/4020 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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