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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4028
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| タイトル: | Transport properties of field-effect transistor with Langmuir-Blodgett films of C_<60> dendrimer and estimation of impurity levels |
| 著者: | Kawasaki, Naoko
Nagano, Takayuki
Kubozono, Yoshihiro
Sako, Yuuki
Morimoto, Yu
Takaguchi, Yutaka
Fujiwara, Akihiko
Chu, Chih-Chien
Imae, Toyoko |
| 発行日: | 2007 |
| 出版者: | AMERICAN INSTITUTE OF PHYSICS |
| 誌名: | Applied Physics Letters |
| 巻: | 91 |
| 号: | 24 |
| 開始ページ: | 243515-1 |
| 終了ページ: | 243515-3 |
| DOI: | 10.1063/1.2824818 |
| 抄録: | Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C_<60> dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7×10^3 cm^2 V^<-1> s^<-1> at 300 K, whose value is twice as high as that (1.4×10^<-3> cm^2 V^<-1> s<-1>) for the FET with spin-coated films of C_<60> dendrimer. This originates from the formation of ordered π-conduction network of C_<60> moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films. |
| Rights: | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in (Naoko Kawasaki, Takayuki Nagano, Yoshihiro Kubozono, Yuuki Sako, Yu Morimoto, Yutaka Takaguchi, Akihiko Fujiwara, Chih-Chien Chu, and Toyoko Imae, Applied Physics Letters91(24), 243515 (2007)) and may be found at http://link.aip.org/link/?apl/91/243515. |
| URI: | http://hdl.handle.net/10119/4028 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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