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Master of Science（Materials Science） >
H19) (Jun.2007 - Mar.2008 >
Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/4237
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| Title: | Sb系化合物半導体を用いた中赤外受光デバイスの作製 |
| Authors: | 有田, 潤哉 |
| Authors(alternative): | ありた, じゅんや |
| Keywords: | InSb
photo diode
mid-infrared
中赤外
フォトダイオード |
| Issue Date: | Mar-2008 |
| Description: | Supervisor:鈴木 寿一
マテリアルサイエンス研究科
修士 |
| Title(English): | Fabrication of mid-infrared photo detecting devices of Sb-based semiconductor |
| Authors(English): | Arita, Jun-ya |
| Language: | jpn |
| URI: | https://hdl.handle.net/10119/4237 |
| Appears in Collections: | M-MS. 2007年度(H19) (Jun.2007 - Mar.2008)
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