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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4507
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| タイトル: | Fabrication of ambipolar field-effect transistor device with heterostructure of C_<60> and pentacene |
| 著者: | Kuwahara, Eiji
Kubozono, Yoshihiro
Hosokawa, Tomoko
Nagano, Takayuki
Masunari, Kosuke
Fujiwara, Akihiko |
| 発行日: | 2004-11-15 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 85 |
| 号: | 20 |
| 開始ページ: | 4765 |
| 終了ページ: | 4767 |
| DOI: | 10.1063/1.1818336 |
| 抄録: | Ambipolar field-effect transistor (FET) device was fabricated with heterostructure of thin films of C_<60> and pentacene. Three types of device structures in the C_<60>/pentacene heterostructure FET device were studied in order to realize the best ambipolar properties. In the middle-contact type FET device of C_<60> and pentacene, the mobility μ in p-channel operation was estimated to be 6.8×10^<-2> cm^2 V^<-1> s^<-1>, while the μ in n-channel operation was 1.3×10^<-3> cm^2 V^<-1> s^<-1>. This ambipolar FET device is available for a practical building-block to form CMOS integrated circuits with low-power consumption, good-noise margins, and ease of design. |
| Rights: | Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in E. Kuwahara, Y. Kubozono, T. Hosokawa, T. Nagano, K. Masunari and A. Fujiwara, Applied Physics Letters, 85(20), 4765-4767 (2004) and may be found at http://link.aip.org/link/?APPLAB/85/4765/1 |
| URI: | http://hdl.handle.net/10119/4507 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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