|
JAIST Repository >
School of Materials Science >
Articles >
Journal Articles >
Please use this identifier to cite or link to this item:
https://hdl.handle.net/10119/4513
|
| Title: | Photoinduced fluorescence enhancement in CdSe/ZnS quantum dot monolayers: Influence of substrate |
| Authors: | Uematsu, Takafumi
Maenosono, Shinya
Yamaguchi, Yukio |
| Issue Date: | 2006-07-18 |
| Publisher: | American Institute of Physics |
| Magazine name: | Applied Physics Letters |
| Volume: | 89 |
| Number: | 3 |
| Start page: | 031910-1 |
| End page: | 031910-3 |
| DOI: | 10.1063/1.2227053 |
| Abstract: | Photoinduced fluorescence enhancement (PFE) of CdSe/ZnS core/shell quantum dot (QD) films on SiO_x substrates was investigated. The fluorescence intensity of the QD film on SiO_<1.9> was greatly enhanced by continuous irradiation in vacuum, while the same QD film on SiO_<0.6> showed a small enhancement of the fluorescence intensity. After irradiation, the rate of fluorescence decay of the QD film on SiO_<0.6> was smaller than that of the QD film on SiO_<1.9>. Our results suggest that the origin of PFE derives from the photoejection of electrons into the substrate, and that the oxygen-excess-related defects work as trap sites for the electrons. |
| Rights: | Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Takafumi Uematsu, Shinya Maenosono, and Yukio Yamaguchi, Applied Physics Letters, 89(3), 031910 (2006) and may be found at http://link.aip.org/link/?APPLAB/89/031910/1 |
| URI: | https://hdl.handle.net/10119/4513 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
|
Files in This Item:
| File |
Description |
Size | Format |
|---|
| 7281.pdf | | 340Kb | Adobe PDF | View/Open |
|
All items in DSpace are protected by copyright, with all rights reserved.
|
