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c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/4531
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| タイトル: | Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten |
| 著者: | Heya, Akira
Masuda, Atsushi
Matsumura, Hideki |
| 発行日: | 1999-04-12 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 74 |
| 号: | 15 |
| 開始ページ: | 2143 |
| 終了ページ: | 2145 |
| DOI: | 10.1063/1.123782 |
| 抄録: | A method for crystallizing amorphous silicon (a-Si) films at low temperatures is proposed. In the method, a-Si films are crystallized at temperatures lower than 400 °C by annealing in the presence of atomic hydrogen. The hydrogen atoms are generated by catalytic cracking reaction of H_2 gas on a heated tungsten catalyzer in the catalytic chemical vapor deposition apparatus. It is found that the crystalline fraction of such an a-Si film is increased from 0% to several tens %, and at the same time the a-Si film itself is etched with the rate of several tens nm/min by annealing in atomic hydrogen. This increment of crystalline fraction appears dependent on the quality of initial a-Si films. It is implied that there are several types of a-Si even if the difference among a-Si films cannot be detected by Raman scattering spectroscopy and other means for measurements. |
| Rights: | Copyright 1999 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Akira Heya, Atsushi Masuda, Hideki Matsumura, Applied Physics Letters, 74(15), 2143-2145 (1999) and may be found at http://link.aip.org/link/?APPLAB/74/2143/1 |
| URI: | http://hdl.handle.net/10119/4531 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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