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| Title: | Fablication of GaAs MISFET with nm-Thin Oxidized Layer Formed by UV and Ozone Process |
| Authors: | Iiyama, Koichi
Kita, Yukihiro
Ohta, Yosuke
Nasuno, Masaaki
Takamiya, Saburo
Higashimine, Koichi
Ohtsuka, Nobuo |
| Keywords: | Compound semiconductors
GaAs
MISFET
selfalign
ultraviolet (UV) and ozone process |
| Issue Date: | 2002-11 |
| Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
| Magazine name: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Volume: | 49 |
| Number: | 11 |
| Start page: | 1856 |
| End page: | 1862 |
| DOI: | 10.1109/TED.2002.804720 |
| Abstract: | A gate insulating layer with single nm-order thickness for suppressing gate leakage current is one of the key factors in extending downsizing limits, based upon the scaling rule, of field-effect-type transistors. We describe the fabrication and characterization of GaAs MISFETs with a nm-thin oxidized layer as the gate insulating layer, which is formed by an ultraviolet (UV) and ozone process. The UV and ozone process forms oxidized GaAs layers near the surface, which effectively suppress the reverse leakage current by several orders of magnitude. The fabricated GaAs MISFET can operate not only in the depletion mode, but also in the accumulation mode up to 3 V gate voltage for 8-nm-thick oxidized layers due to the current blocking effect of the oxidized layer. A current cutoff frequency of 6 GHz and a maximum oscillation frequency of 8 GHz are obtained for a GaAs MISFET with 1-/spl mu/m gate length and 8-nm-thick oxidized layers. |
| Rights: | Copyright (c)2002 IEEE. Reprinted from IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(11), 2002, 1856-1862. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. |
| URI: | http://hdl.handle.net/10119/4652 |
| Material Type: | publisher |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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