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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/5003
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| タイトル: | A WN_x Gate Self-Aligned GaAs p-Channel MESFET for Complementary Logic |
| 著者: | Woodhead, Jonathan
Uchitomi, Naotaka
Kameyama, Atushi
Ikawa, Yasuo
Toyoda, Nobuyuki |
| 発行日: | 1987-02 |
| 出版者: | Institute of Electrical and Electronics Engineers (IEEE) |
| 誌名: | IEEE Transactions on Electron Devices |
| 巻: | 34 |
| 号: | 2 |
| 開始ページ: | 170 |
| 終了ページ: | 174 |
| 抄録: | The Schottky barrier of reactively sputtered WN_x to p-type GaAs has been investigated. Postdeposition heat treatments above 500°C led to a reduction in the barrier height but for lamp annealing at 740°C the barrier heights are 0.68 eV. Self-aligned p-channel MESFET's were fabricated with WN_x gates by a refractory metal process involving the above heat treatment. The Schottky-barrier heights were close to the expected values. K-values of FET's with 2 μm × 24 μm gates were 0.088 mA/V^2, consistent with previously reported results. SPICE simulation studies carried out for a variety of complementary-type logic gates, indicate that power dissipation × delay time products of less than 10 fJ may be achievable over the power range 5-50 μW/gate. Thus complementary logic may be useful for applications where low power dissipation is at a premium. |
| Rights: | Copyright (C)1987 IEEE. Reprinted from IEEE Transactions on Electron Devices, 34(2), 1987, 170-174. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of JAIST's products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org. By choosing to view this document, you agree to all provisions of the copyright laws protecting it. |
| URI: | http://hdl.handle.net/10119/5003 |
| 資料タイプ: | publisher |
| 出現コレクション: | a10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| B10913.pdf | | 652Kb | Adobe PDF | 見る/開く |
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