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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/7784

タイトル: Improvement in the conversion efficiency of single-junction SiGe solar cells by international introduction of the compositional distribution
著者: Tayanagi, Misumi
Usami, Noritaka
Pan, Wugen
Ohdaira, Keisuke
Fujiwara, Kozo
Nose, Yoshitaro
Nakajima, Kazuo
発行日: 2007-03-02
出版者: American Institute of Physics
誌名: Journal of Applied Physics
巻: 101
号: 5
開始ページ: 054504-1
終了ページ: 054504-6
DOI: 10.1063/1.2709575
抄録: We attempted to clarify the impact of the compositional distribution on recently reported improvement in the conversion efficiency of solar cells based on bulk multicrystalline SiGe. For this purpose, Si_<1-x>Ge_x/Si_<1-y>Ge_y multiple quantum well structures on heavily doped Si-on-insulator were employed as model crystals. The combination of x and y, the width of each layer, and the number of repetitions were systematically changed to study the influence of the introduction of Ge on photocarrier generation and carrier transport while keeping the average Ge composition as 0.03. Spatial modulation of the band structure leads to formation of quantum wells for holes and gives negative impact especially in the photocarrier collection from the n-type region. When the depth of wells was designed to be constant, short-circuit carrier density was found to show a maximum at appropriate compositional distribution due to the competition between the increase in the photocarrier generation and the decrease in the minority carrier diffusion length. Within a limited compositional range, the overall performance of the solar cell was revealed to be improved by the introduction of the compositional distribution compared with that based on uniform Si_<0.97>Ge_<0.03>. Therefore, intentional introduction of the compositional distribution is concluded to be useful for improvement in the solar cell performance if appropriate dispersion is chosen.
Rights: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Tayanagi, N. Usami, W. Pan, K. Ohdaira, K. Fujiwara, Y. Nose, and K. Nakajima, Journal of Applied Physics, 101(5), 054504 (2007) and may be found at http://link.aip.org/link/?JAPIAU/101/054504/1
URI: http://hdl.handle.net/10119/7784
資料タイプ: publisher
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

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