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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/7786
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| タイトル: | Organic Field Effect Transistors with Dipole-Polarized Polymer Gate Dielectrics for Control of Threshold Voltage |
| 著者: | Sakai, Heisuke
Takahashi, Yoshikazu
Murata, Hideyuki |
| 発行日: | 2007-09-10 |
| 出版者: | American Institute of Physics |
| 誌名: | Applied Physics Letters |
| 巻: | 91 |
| 号: | 11 |
| 開始ページ: | 113502-1 |
| 終了ページ: | 113502-3 |
| DOI: | 10.1063/1.2783180 |
| 抄録: | The authors demonstrate organic field effect transistors (OFETs) with a dipole-polarized polyurea for the gate dielectrics. In the dielectrics, the internal electric field induces the mobile charge carrier in the semiconductor layer to the semiconductor-dielectric interface. OFETs with dipole-polarized gate dielectrics exhibit lower threshold voltage. With nonpolarized gate dielectrics, the threshold voltage was -11.4 V, whereas that decreased to -5.3 V with polarized gate dielectrics. In addition to the threshold voltage, polarized gate dielectrics reduced subthreshold swing from 4.1 to 2.4 V/decade at the gate voltage of -20 V. These results show that dipole-polarized polyurea gate dielectrics allow us to operate OFETs with lower power consumption. |
| Rights: | Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Heisuke Sakai, Yoshikazu Takahashi, and Hideyuki Murata, Applied Physics Letters, 91(11), 113502 (2007) and may be found at http://link.aip.org/link/?APPLAB/91/113502/1 |
| URI: | http://hdl.handle.net/10119/7786 |
| 資料タイプ: | publisher |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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記述 |
サイズ | 形式 |
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| A10649.pdf | | 253Kb | Adobe PDF | 見る/開く |
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