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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/7865
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タイトル: | Trap states and transport characteristics in picene thin film field-effect transistor |
著者: | Kawasaki, Naoko Kubozono, Yoshihiro Okamoto, Hideki Fujiwara, Akihiko Yamaji, Minoru |
発行日: | 2009-01-29 |
出版者: | American Institute of Physics |
誌名: | Applied Physics Letters |
巻: | 94 |
号: | 4 |
開始ページ: | 043310-1 |
終了ページ: | 043310-3 |
DOI: | 10.1063/1.3076124 |
抄録: | Transport characteristics and trap states are investigated in picene thin film field-effect transistor under O_2 atmosphere on the basis of multiple shallow trap and release (MTR) model. The channel transport is dominated by MTR below 300 K. It has been clarified on the basis of MTR model that the O_2-exposure induces a drastic reduction in shallow trap density to increase both the field-effect mobility μ and on-off ratio. We also found that the O_2-exposure never caused an increase in hole carrier density. Actually, a very high μ value of 3.2 cm^2 V^<-1> s^<-1> is realized under 500 Torr of O_2. |
Rights: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Naoko Kawasaki, Yoshihiro Kubozono, Hideki Okamoto, Akihiko Fujiwara, and Minoru Yamaji, Applied Physics Letters, 94, 043310 (2009) and may be found at http://link.aip.org/link/?APPLAB/94/043310/1 |
URI: | http://hdl.handle.net/10119/7865 |
資料タイプ: | publisher |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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