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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/7934
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タイトル: | Multi-Layer Polymer Light-Emitting Diodes Prepared by Vapor Deposition Polymerization of Polyazomethine Thin Film |
著者: | Itabashi, Atsushi Fukushima, Masao Murata, Hideyuki |
キーワード: | vapor deposition polymerization polymer light-emitting diodes polyazomethine low annealing temperature π-conjugated polymer |
発行日: | 2008-02-15 |
出版者: | The Japan Society of Applied Physics |
誌名: | Japanese Journal of Applied Physics |
巻: | 47 |
号: | 2 |
開始ページ: | 1271 |
終了ページ: | 1275 |
DOI: | 10.1143/JJAP.47.1271 |
抄録: | A novel polyazomethine (PAM) thin film deposited by vapor deposition polymerization (VDP) process was used in the emissive layer of polymer light-emitting diodes (PLEDs). 1,4-bis(4-formylstyryl)benzene (BFSB) and 4,4''-diamino-(1,1',4',1'')-terphenyl (DAT) were co-deposited to form PAM thin films at various substrate temperatures. Fluorescent quantum yield of novel PAM synthesized by using BFSB monomer increased one order of magnitude compared with the previous report. PLEDs with the device structure of ITO /PEDOT:PSS (100 nm)/PAM (140 nm)/LiF (0.5 nm)/Al (80 nm) exhibited of electroluminescence from the PAM layer for the first time. The characteristics of PLEDs suggest the electron mobility of PAM is higher than hole mobility. |
Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2008 The Japan Society of Applied Physics. Atsushi Itabashi, Masao Fukushima, Hideyuki Murata, Japanese Journal of Applied Physics, 47(2), 2008, 1271-1275. http://jjap.ipap.jp/link?JJAP/47/1271/ |
URI: | http://hdl.handle.net/10119/7934 |
資料タイプ: | author |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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C10652.pdf | | 225Kb | Adobe PDF | 見る/開く |
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