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| Title: | Observation of Extremely High Current Densities on Order of MA/cm^2 in Copper Phthalocyanine Thin-Film Devices with Submicron Active Areas |
| Authors: | Matsushima, Toshinori
Adachi, Chihaya |
| Keywords: | copper phthalocyanine
space-charge-limited current
electron-beam lithography
high-current-density injection
electrically pumped organic laser diode |
| Issue Date: | 2007-11-30 |
| Publisher: | The Japan Society of Applied Physics |
| Magazine name: | Japanese Journal of Applied Physics |
| Volume: | 46 |
| Number: | 47 |
| Start page: | L1179 |
| End page: | L1181 |
| DOI: | 10.1143/JJAP.46.L1179 |
| Abstract: | Using contact photolithography and electron-beam lithography techniques, we manufactured copper phthalocyanine thin-film devices with active areas ranging from 1,000,000 to 0.04 µm^2 to investigate how much current can flow through these devices with the aim of fabricating electrically pumped organic laser diodes. From the results of our current density–voltage (J–V) measurements, we found that the device with the smallest active area of 0.04 µm^2 on a silicon substrate exhibits an extremely high current density of 6,350,000 A/cm^2 due to improved thermal management. The J–V characteristics of the devices are controlled by shallow-trap space-charge-limited current (SCLC), trap-free SCLC, and two-carrier injection current mechanisms over a wide range of current densities between nA/cm^2 and MA/cm^2. |
| Rights: | This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2007 The Japan Society of Applied Physics. Toshinori Matsushima, and Chihaya Adachi, Japanese Journal of Applied Physics, 46(47), 2007, L1179-L1181. http://jjap.ipap.jp/link?JJAP/46/L1179/ |
| URI: | http://hdl.handle.net/10119/7936 |
| Material Type: | author |
| Appears in Collections: | c10-1. 雑誌掲載論文 (Journal Articles)
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| C12177.pdf | | 312Kb | Adobe PDF | View/Open |
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