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c10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/8165
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| タイトル: | Formation of micrometer-order-thick poly-Si films on textured glass substrates by flash lamp annealing of a-Si films prepared by catalytic chemical vapor deposition |
| 著者: | Ohdaira, K.
Fujiwara, T.
Endo, Y.
Nishioka, K.
Matsumura, H. |
| キーワード: | A1. Recrystallization
B2. Semiconducting silicon
B3. Solar cells
A3. Chemical vapor deposition processes |
| 発行日: | 2009-01-15 |
| 出版者: | Elsevier |
| 誌名: | Journal of Crystal Growth |
| 巻: | 311 |
| 号: | 3 |
| 開始ページ: | 769 |
| 終了ページ: | 772 |
| DOI: | 10.1016/j.jcrysgro.2008.09.093 |
| 抄録: | We investigate the microstructures of polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-μm-thick precursor a-Si films prepared by catalytic chemical vapor deposition (Cat-CVD) on Cr-coated textured glass substrates. Crystallization of a-Si is performed, keeping the dome-shaped structure formed during deposition of a-Si. The poly-Si film consists of densely-packed fine grains with sizes on the order of 10 nm. The grain size tends to increase approaching the Si/Cr interface, which can be understood as the result of solid-phase nucleation and following crystallization. Minority carrier lifetimes of the poly-Si films are worse than those formed on flat substrates. This degradation might be due to gaps in the Si layer formed during a-Si deposition or FLA. |
| Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. K. Ohdaira, T. Fujiwara, Y. Endo, K. Nishioka, and H. Matsumura, Journal of Crystal Growth, 311(3), 2009, 769-772, http://dx.doi.org/10.1016/j.jcrysgro.2008.09.093 |
| URI: | http://hdl.handle.net/10119/8165 |
| 資料タイプ: | author |
| 出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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このアイテムのファイル:
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| J_Cryst_Growth_311_769_2009.pdf | | 751Kb | Adobe PDF | 見る/開く |
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