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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/8167
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タイトル: | Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing |
著者: | Ohdaira, Keisuke Shiba, Kazuhiro Takemoto, Hiroyuki Fujiwara, Tomoko Endo, Yohei Nishizaki, Shogo Jang, Young Rae Matsumura, Hideki |
キーワード: | Catalytic CVD Flash lamp annealing Polycrystalline Si Hydrogen content Dehydrogenation Glass substrate Adhesion Plasma-enhanced CVD |
発行日: | 2009-04-30 |
出版者: | Elsevier |
誌名: | Thin Solid Films |
巻: | 517 |
号: | 12 |
開始ページ: | 3472 |
終了ページ: | 3475 |
DOI: | 10.1016/j.tsf.2009.01.075 |
抄録: | Amorphous Si (a-Si) films with lower hydrogen contents show better adhesion to glass during flash lamp annealing (FLA). The 2.0-μm-thick a-Si films deposited by plasma-enhanced chemical vapor deposition (PECVD), containing 10% hydrogen, start to peel off even at a lamp irradiance lower than that required for crystallization, whereas a-Si films deposited by catalytic CVD (Cat-CVD) partially adhere even after crystallization. Dehydrogenated Cat-CVD a-Si films show much better adhesion to glass, and are converted to polycrystalline Si (poly-Si) without serious peeling, but are accompanied by the generation of crack-like structures. These facts demonstrate the superiority of as-deposited Cat-CVD a-Si films as a precursor material for micrometer-thick poly-Si formed by FLA. |
Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Keisuke Ohdaira, Kazuhiro Shiba, Hiroyuki Takemoto, Tomoko Fujiwara, Yohei Endo, Shogo Nishizaki, Young Rae Jang, and Hideki Matsumura, Thin Solid Films, 517(12), 2009, 3472-3475, http://dx.doi.org/10.1016/j.tsf.2009.01.075 |
URI: | http://hdl.handle.net/10119/8167 |
資料タイプ: | author |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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Thin_Solid_Films_517_3472_2009.pdf | | 199Kb | Adobe PDF | 見る/開く |
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