JAIST Repository >
c. マテリアルサイエンス研究科・マテリアルサイエンス系 >
c10. 学術雑誌論文等 >
c10-1. 雑誌掲載論文 >

このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/8171

タイトル: High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
著者: Ohdaira, Keisuke
Nishizaki, Shogo
Endo, Yohei
Fujiwara, Tomoko
Usami, Noritaka
Nakajima, Kazuo
Matsumura, Hideki
キーワード: polycrystalline Si
flash lamp annealing
crystallization
minority carrier lifetime
high-pressure water vapor annealing
発行日: 2007-11-06
出版者: The Japan Society of Applied Physics
誌名: Japanese Journal of Applied Physics
巻: 46
号: 11
開始ページ: 7198
終了ページ: 7203
DOI: 10.1143/JJAP.46.7198
抄録: Polycrystalline silicon (poly-Si) films with a thickness over 1 μm are formed by the flash lamp annealing (FLA), with a duration of less than 10 ms, of precursor amorphous silicon (a-Si) films prepared by catalytic chemical vapor deposition (Cat-CVD) on quartz substrates. Thicker a-Si films can be crystallized under lower lamp irradiance, which can be understood by considering both the total generated heat in the a-Si films and the thermal diffusion into the quartz substrates. Results of microwave photoconductivity decay (μ-PCD) measurement indicate that high-pressure water vapor annealing (HPWVA) is effective for improving the minority carrier lifetime of the poly-Si films. The film with a thickness of 1.5 μm crystallized under a high lamp irradiance shows minority carrier lifetimes over 5 μs, indicating the high feasibility of applying the crystalline film to high-efficiency thin-film solar cells.
Rights: This is the author's version of the work. It is posted here by permission of The Japan Society of Applied Physics. Copyright (C) 2007 The Japan Society of Applied Physics. Keisuke Ohdaira, Shogo Nishizaki, Yohei Endo, Tomoko Fujiwara, Noritaka Usami, Kazuo Nakajima, and Hideki Matsumura, Japanese Journal of Applied Physics, 46(11), 2007, 7198-7203. http://jjap.ipap.jp/link?JJAP/46/7198/
URI: http://hdl.handle.net/10119/8171
資料タイプ: author
出現コレクション:c10-1. 雑誌掲載論文 (Journal Articles)

このアイテムのファイル:

ファイル 記述 サイズ形式
Jpn_J_Appl_Phys_46_7198_2007.pdf447KbAdobe PDF見る/開く

当システムに保管されているアイテムはすべて著作権により保護されています。

 


お問い合わせ先 : 北陸先端科学技術大学院大学 研究推進課図書館情報係