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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/9040
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| Title: | ホウ化物薄膜のエピタキシャル成長における表面・界面制御 |
| Other Titles: | Surface and interface control in the epitaxial growth of boride thin films |
| Authors: | 高村, 由起子 |
| Authors(alternative): | TAKAMURA, YUKIKO |
| Keywords: | MBE
エピタキシャル
走査プローブ顕微鏡
超薄膜 |
| Issue Date: | 17-Jun-2010 |
| Abstract: | 薄膜中への酸素や水分の混入を防ぎ、かつ、成長表面のその場観察が可能な気相成長装置を立ち上げ、高融点かつ高電気伝導性を有する二ホウ化ジルコニウムの薄膜をシリコン、サファイア、窒化ガリウム上にエピタキシャル成長した。成長中の表面再構成構造のその場観察から、基板由来の元素が表面反応に大きく寄与していること、また、基板―ホウ化物結晶の界面構造の安定性が薄膜中の結晶の配向を支配していることが明らかとなった。 : A unique ultrahigh vacuum chemical vapor epitaxy system, which prevents oxygen incorporation into boride films and also has capability of in-situ growth monitoring, was successfully built. The epitaxial growth of zirconium diboride thin films was carried out on silicon, sapphire, and gallium nitride. Surface segregating elements originating from the substrates, which were observed as different surface reconstructions during the growth, were found to be responsible for the reaction at the surface. Single-crystallinity was confirmed for the films grown on sapphire substrates under optimized conditions, driven by a stable interface structure, while the films grown on silicon contained some misoriented crystallites due to competing interfaces. |
| Description: | 研究種目：若手研究（Ａ）
研究期間：2007～2009
課題番号：19686043
研究者番号：90344720
研究分野：工学
科研費の分科・細目：材料工学・材料加工・処理 |
| Language: | jpn |
| URI: | http://hdl.handle.net/10119/9040 |
| Appears in Collections: | 2009年度 (FY 2009)
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Files in This Item:
| File |
Description |
Size | Format |
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| 19686043seika.pdf | | 320Kb | Adobe PDF | View/Open |
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