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このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/9198
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タイトル: | Enhanced performance of organic light-emitting diodes by inserting wide-energy-gap interlayer between hole-transport layer and light-emitting layer |
著者: | Honda, Yusuke Matsushima, Toshinori Murata, Hideyuki |
キーワード: | Organic light-emitting diode Singlet-polaron annihilation Carrier recombination efficiency Degradation Unstable α-NPD excitons |
発行日: | 2009-07-09 |
出版者: | Elsevier |
誌名: | Thin Solid Films |
巻: | 518 |
号: | 2 |
開始ページ: | 545 |
終了ページ: | 547 |
DOI: | 10.1016/j.tsf.2009.07.016 |
抄録: | We demonstrated that driving voltages, external quantum efficiencies, and power conversion efficiencies of organic light-emitting diodes (OLEDs) are improved by inserting a wide-energy-gap interlayer of (4,4′-N,N′-dicarbazole)biphenyl (CBP) between a hole-transport layer of N,N-di(naphthalen-1-yl)-N,N′-diphenyl-benzidine (α-NPD) and a light-emitting layer of tris(8-hydroxyquinoline)aluminum. By optimization of CBP thicknesses, the device with a 3-nm-thick CBP layer had the lowest driving voltage and the highest power conversion efficiency among the OLEDs. We attributed these improvements to enhancement of a carrier recombination efficiency and suppression of exciton–polaron annihilation. Moreover, we found that the degradation of the OLEDs is caused by decomposition of CBP molecules and excited-state α-NPD molecules. |
Rights: | NOTICE: This is the author's version of a work accepted for publication by Elsevier. Yusuke Honda, Toshinori Matsushima, Hideyuki Murata, Thin Solid Films, 518(2), 2009, 545-547, http://dx.doi.org/10.1016/j.tsf.2009.07.016 |
URI: | http://hdl.handle.net/10119/9198 |
資料タイプ: | author |
出現コレクション: | c10-1. 雑誌掲載論文 (Journal Articles)
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記述 |
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14258.pdf | | 715Kb | Adobe PDF | 見る/開く |
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