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Doctor of Philosophy（Materials Science） >
H26) (Jun.2014 - Mar.2015 >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10119/12772
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| Title: | n型結晶シリコン用高品質Cat-CVD窒化シリコンパッシベーション層の開発とその裏面コンタクト結晶シリコン太陽電池への応用 |
| Authors: | Trinh, Thi Cham |
| Authors(alternative): | とりん, てぃ ちゃむ |
| Keywords: | Catalytic chemical vapor deposition (Cat-CVD)
Phosphorus Cat-doping
surface recombination velocity
silicon nitride (SiNx)
passivation quality |
| Issue Date: | Mar-2015 |
| Description: | Supervisor:大平 圭介
マテリアルサイエンス研究科
博士 |
| Title(English): | Development of high-quality Cat-CVD SiNx passivation layer for n-type c-Si and its application to back-contact c-Si solar cells |
| Authors(English): | Trinh, Thi Cham |
| Language: | eng |
| URI: | http://hdl.handle.net/10119/12772 |
| Academic Degrees and number: | 甲第866号 |
| Degree-granting date: | 2015-03-20 |
| Degree name: | 博士（マテリアルサイエンス） |
| Degree-granting institutions: | 北陸先端科学技術大学院大学 |
| Appears in Collections: | D-MS. 2014年度(H26) (Jun.2014 - Mar.2015)
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Files in This Item:
| File |
Description |
Size | Format |
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| abstract.pdf | 英文要旨 | 11Kb | Adobe PDF | View/Open | | paper.pdf | 本文 | 11070Kb | Adobe PDF | View/Open | | summary.pdf | 内容の要旨及び論文審査の結果の要旨 | 239Kb | Adobe PDF | View/Open |
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