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http://hdl.handle.net/10119/15731
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| Title: | Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B |
| Authors: | Islam, Md. Earul
Akabori, Masashi |
| Keywords: | MBE
MnAs
InAs
GaAs(111)B |
| Issue Date: | 2017-02-08 |
| Publisher: | Elsevier |
| Magazine name: | Journal of Crystal Growth |
| Volume: | 463 |
| Start page: | 86 |
| End page: | 89 |
| DOI: | 10.1016/j.jcrysgro.2017.02.009 |
| Abstract: | We carried out molecular beam epitaxial (MBE) growth of MnAs/InAs hybrid structure on GaAs(111)B for spin field effect transistor (spin-FET) applications. We observed good alignment of hexagonal MnAs and cubic InAs epitaxial layers with GaAs(111)B by X-ray diffraction (XRD) measurement. We observed smooth surface morphology of MnAs/InAs by atomic force microscopy (AFM), and also observed maze-like magnetic structure by magnetic force microscopy (MFM). We observed easy and hard magnetizations in-plane and out-of-plane directions similar to MnAs/GaAs(111)B using superconducting quantum interference device (SQUID) magnetometer. We believe that the MnAs/InAs hybrid structure on GaAs(111)B can be a base structure for spin-FETs. |
| Rights: | Copyright (C)2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Md. Earul Islam, Masashi Akabori, Journal of Crystal Growth, 463, 2017, 86-89, http://dx.doi.org/10.1016/j.jcrysgro.2017.02.009 |
| URI: | http://hdl.handle.net/10119/15731 |
| Material Type: | author |
| Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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