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赤堀　誠志（アカボリ　マサシ）准教授研究者総覧

No．書籍情報
1 Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy / Tran, Dat Q., Pham, Huyen T., Higashimine, Koichi, Oshima, Yoshifumi, Akabori, Masashi, Physica E: Low-dimensional Systems and Nanostructures, 99, pp.58-62, 2018-02-20, Elsevier
2 In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure / Islam, Md. Earul, Akabori, Masashi, Physica B: Condensed Matter, 532, pp.95-98, 2017-03-06, Elsevier
3 Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B / Islam, Md. Earul, Akabori, Masashi, Journal of Crystal Growth, 463, pp.86-89, 2017-02-08, Elsevier
4 Characterization of spin-orbit coupling in gated wire structures using Al_2O_3/In_0.75Ga_0.25As/In_0.75Al_0.25As inverted heterojunctions / Ohori, Takahiro, Akabori, Masashi, Hidaka, Shiro, Yamada, Syoji, Journal of Applied Physics, 120(14), pp.142123-1-142123-4, 2016-09-30, American Institute of Physics
5 領域選択形成したＩｎＡｓナノワイヤ／強磁性体複合構造によるスピンデバイス / 赤堀, 誠志, 科学研究費助成事業研究成果報告書, pp.1-6, 2015-06-03
6 High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N_2 gas field ion source / Akabori, Masashi, Hidaka, Shiro, Yamada, Syoji, Kozakai, Tomokazu, Matsuda, Osamu, Yasaka, Anto, Japanese Journal of Applied Physics, 53(11), pp.118002-1-118002-3, 2014-10-09, IOP Publishing
7 Realization of In_<0.75>Ga_<0.25>As two-dimensional electron gas bilayer system for spintronics devices based on Rashba spin-orbit interaction / Akabori, M., Hidaka, S, Iwase, H., Yamada, S., Ekenberg, U., Journal of Applied Physics, 112(11), pp.113711-1-113711-6, 2012-12-10, American Institute of Physics
8 High-Efficiency Long-Spin-Coherence Electrical Spin Injection in CoFe/InGaAs Two-Dimensional Electron Gas Lateral Spin-Valve Devices / Hidaka, Shiro, Akabori, Masashi, Yamada, Syoji, Applied Physics Express, 5(11), pp.113001-1-113001-3, 2012-10-12, The Japan Society of Applied Physics
9 Electron distribution and scattering in InAs films on low-k flexible substrates / Nguyen, Cong Thanh, Shih, Hong-An, Akabori, Masashi, Suzuki, Toshi-kazu, Applied Physics Letters, 100(23), pp.232103-1-232103-4, 2012-06-05, American Institute of Physics
10 (110)上の選択成長を利用した平面型並列ナノワイヤ電界効果トランジスタ / 赤堀, 誠志, 科学研究費補助金研究成果報告書, pp.1-5, 2012-05-29
11 Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors / Akabori, Masashi, Murakami, Tatsuya, Yamada, Syoji, Journal of Crystal Growth, 345(1), pp.22-26, 2012-02-10, Elsevier
12 Electron transport properties of InAs ultrathin films obtained by epitaxial lift-off and van der Waals bonding on flexible substrates / Takita, Hayato, Hashimoto, Norihiko, Nguyen, Cong Thanh, Kudo, Masahiro, Akabori, Masashi, Suzuki, Toshi-kazu, Applied Physics Letters, 97(1), pp.12102-1-12102-3, 2010-07-07, American Institute of Physics
13 Growth and Magneto-transport Characterization of Double-doped InGaAs/InAlAs Heterostructures with High Indium Compositions / Akabori, M., Morimoto, K., Wei, W., Iwase, H., Yamada, S., AIP Conference Proceedings, 1399, pp.725-726, 2010-07, American Institute of Physics
14 Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases / Akabori, Masashi, Trinh, Thanh Quang, Kudo, Masahiro, Hardtdegen, Hilde, Schäpers, Thomas, Suzuki, Toshi-kazu, Physica E: Low-dimensional Systems and Nanostructures, 42(4), pp.1130-1133, 2010, Elsevier
15 Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N_2 carrier gas / Akabori, M., Sladek, K., Hardtdegen, H., Schäpers, Th., Grützmacher, D., Journal of Crystal Growth, 311(15), pp.3813-3816, 2009, Elsevier
16 Spin-splitting analysis of a two-dimensional electron gas in almost strain-free In_<0.89>Ga_<0.11>Sb/In_<0.88>Al_<0.12>Sb by magnetoresistance measurements / Akabori, M., Guzenko, V. A., Sato, T., Schapers, Th., Suzuki, T., Yamada, S., Physical Review B, 77(20), pp.205320-, 2008-05-15, American Physical Society
17 Epitaxial Lift-Off of InGaAs/InAlAs Metamorphic High Electron Mobility Heterostructures and Their van der Waals Bonding on AlN Ceramic Substrates / Jeong, Yonkil, Shindo, Masanori, Akabori, Masashi, Suzuki, Toshi-kazu, Applied Physics Express, 1, pp.021201-1-021201-3, 2008-01-25, The Japan Society of Applied Physics
18 Spin splitting in InGaSb/InAlSb 2DEG having high indium content / Akabori, M, Sunouchi, T, Kakegawa, T, Sato, T, Suzuki, T, Yamada, S, Physica E: Low-dimensional Systems and Nanostructures, 34(1-2), pp.413-416, 2006-08, Elsevier
19 Clear Spin Valve Signals in Conventional NiFe/ In_<0.75>Ga_<0.25>As-2DEG Hybrid Two-Terminal Structures / Akabori, M, Suzuki, K, Yamada, S, Proceedings of the 27th International Conference on the Physics of Semiconductors, 772, pp.1373-1374, 2005-06, AMERICAN INSTITUTE OF PHYSICS
20 Channel Width Dependence of Spin Polarized Transports in NiFe/InGaAs Hybrid Two-Terminal Structures / Akabori, M, Suzuki, K, Yamada, S, J. Superconductivity, 18, pp.367-370, 2005-06, Springer
21 Spin polarized transports through a narrow-gap semiconductor wire with ferromagnetic contacts formed on InAlAs step-graded buffer layers / Akabori, M, Yamada, S, Science and Technology of Advanced Materials, 5(3), pp.305-308, 2004-05, Elsevier

 
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