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http://hdl.handle.net/10119/3324
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Title: | Spin polarized transports through a narrow-gap semiconductor wire with ferromagnetic contacts formed on InAlAs step-graded buffer layers |
Authors: | Akabori, M Yamada, S |
Keywords: | InAs InAlAs 2DEG Step-graded buffer Ferromagnetic electrodes Spin polarized transports |
Issue Date: | 2004-05 |
Publisher: | Elsevier |
Magazine name: | Science and Technology of Advanced Materials |
Volume: | 5 |
Number: | 3 |
Start page: | 305 |
End page: | 308 |
DOI: | 10.1016/j.stam.2003.12.013 |
Abstract: | We investigated the transport properties of ferromagnetic/semiconductor hybrid structures utilizing an InAs/In_<0.75>Al_<0.25>As modulation-doped heterostructures formed on a GaAs (001) substrate with In_xAl_<1-x>As step-graded buffer layers. We used NiFe as ferromagnetic electrodes for injection/detection of spin-polarized electrons, which were formed on side walls of the semiconductor mesa to contact electron channel directly. We measured magneto-transport properties of the samples with current flow between the ferromagnetic electrodes at low temperatures. Under vertical magnetic fields, magneto-resistance oscillations were clearly observed, thus the ferromagnetic electrodes worked as ohmic contacts. In addition, we successfully found spin-valve properties under parallel magnetic fields. Furthermore, we observed the enhancement of spin-valve properties by squeezing the channel width. |
Rights: | Elsevier, Ltd., Masashi Akabori and Syoji Yamada, Science and Technology of Advanced Materials, 5(3), 2004, 305-308. http://www.sciencedirect.com/science/journal/14686996 |
URI: | http://hdl.handle.net/10119/3324 |
Material Type: | author |
Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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