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https://hdl.handle.net/10119/3324
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| Title: | Spin polarized transports through a narrow-gap semiconductor wire with ferromagnetic contacts formed on InAlAs step-graded buffer layers |
| Authors: | Akabori, M
Yamada, S |
| Keywords: | InAs
InAlAs
2DEG
Step-graded buffer
Ferromagnetic electrodes
Spin polarized transports |
| Issue Date: | 2004-05 |
| Publisher: | Elsevier |
| Magazine name: | Science and Technology of Advanced Materials |
| Volume: | 5 |
| Number: | 3 |
| Start page: | 305 |
| End page: | 308 |
| DOI: | 10.1016/j.stam.2003.12.013 |
| Abstract: | We investigated the transport properties of ferromagnetic/semiconductor hybrid structures utilizing an InAs/In_<0.75>Al_<0.25>As modulation-doped heterostructures formed on a GaAs (001) substrate with In_xAl_<1-x>As step-graded buffer layers. We used NiFe as ferromagnetic electrodes for injection/detection of spin-polarized electrons, which were formed on side walls of the semiconductor mesa to contact electron channel directly. We measured magneto-transport properties of the samples with current flow between the ferromagnetic electrodes at low temperatures. Under vertical magnetic fields, magneto-resistance oscillations were clearly observed, thus the ferromagnetic electrodes worked as ohmic contacts. In addition, we successfully found spin-valve properties under parallel magnetic fields. Furthermore, we observed the enhancement of spin-valve properties by squeezing the channel width. |
| Rights: | Elsevier, Ltd., Masashi Akabori and Syoji Yamada, Science and Technology of Advanced Materials, 5(3), 2004, 305-308. http://www.sciencedirect.com/science/journal/14686996 |
| URI: | https://hdl.handle.net/10119/3324 |
| Material Type: | author |
| Appears in Collections: | g10-1. 雑誌掲載論文 (Journal Articles)
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