JAIST Repository >
g. ナノマテリアルテクノロジーセンター >
g10. 学術雑誌論文等 >
g10-1. 雑誌掲載論文 >
このアイテムの引用には次の識別子を使用してください:
http://hdl.handle.net/10119/15736
|
タイトル: | In-plane isotropic magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure |
著者: | Islam, Md. Earul Akabori, Masashi |
キーワード: | MnAs InAs GaAs(111)B spintronics |
発行日: | 2017-03-06 |
出版者: | Elsevier |
誌名: | Physica B: Condensed Matter |
巻: | 532 |
開始ページ: | 95 |
終了ページ: | 98 |
DOI: | 10.1016/j.physb.2017.03.013 |
抄録: | We characterized in-plane magnetic and electrical properties of MnAs/InAs/GaAs(111)B hybrid structure grown by molecular beam epitaxy (MBE). We observed isotropic easy magnetization in two crystallographic in-plane directions, [2^^-110] and [01^^-10] of hexagonal MnAs i.e. [1^^-10] and [11^^-2] of cubic InAs. We also fabricated transmission line model (TLM) devices, and observed almost isotropic electrical properties in two crystallographic in-plane directions, [1^^-10] and [11^^-2] of cubic InAs. Also we tried to fabricate and characterize lateral spin-valve (LSV) devices from the hybrid structure. We could roughly estimate the spin injection efficiency and the spin diffusion length at room temperature in [11^^-2] direction. We believe that the hybrid structures are helpful to design spintronic device with good flexibility in-plane. |
Rights: | Copyright (C)2017, Elsevier. Licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International license (CC BY-NC-ND 4.0). [http://creativecommons.org/licenses/by-nc-nd/4.0/] NOTICE: This is the author's version of a work accepted for publication by Elsevier. Md. Earul Islam and M. Akabori, Physica B: Condensed Matter, 532, 2017, 95-98, http://dx.doi.org/10.1016/j.physb.2017.03.013 |
URI: | http://hdl.handle.net/10119/15736 |
資料タイプ: | author |
出現コレクション: | g10-1. 雑誌掲載論文 (Journal Articles)
|
このアイテムのファイル:
ファイル |
記述 |
サイズ | 形式 |
23340.pdf | | 812Kb | Adobe PDF | 見る/開く |
|
当システムに保管されているアイテムはすべて著作権により保護されています。
|