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このアイテムの引用には次の識別子を使用してください: http://hdl.handle.net/10119/10272

タイトル: Strain-enhanced electron mobility anisotropy in In_xGa_<1-x> As/InP two-dimensional electron gases
著者: Akabori, Masashi
Trinh, Thanh Quang
Kudo, Masahiro
Hardtdegen, Hilde
Schäpers, Thomas
Suzuki, Toshi-kazu
キーワード: InGaAs/InP
Two-dimensional electron gases (2DEGs)
Strained quantum wells (QWs)
Electron mobility anisotropy
Random piezoelectric (PE) scattering
発行日: 2010
出版者: Elsevier
誌名: Physica E: Low-dimensional Systems and Nanostructures
巻: 42
号: 4
開始ページ: 1130
終了ページ: 1133
DOI: 10.1016/j.physe.2009.11.039
抄録: We systematically investigated electron mobility anisotropy in compressively-strained, lattice-matched, and tensilely-strained InGaAs quantum wells (QWs) grown on InP(001) by using Hall-bar devices with various current-flowing directions. Anisotropy of electron mobility, the highest along [1-10] direction and the lowest along [110], is systematically observed in all QWs, and well-fitted with a sinusoidal function of the current-flowing direction angle. The mobility anisotropy is minimum in the lattice-matched case and enhanced by both compressive and tensile strains in the QWs. We consider that random piezoelectric scattering, which is enhanced by the average normal strain in the QW, has anisotropy and plays an important role for the observed results.
Rights: NOTICE: This is the author's version of a work accepted for publication by Elsevier. Masashi Akabori, Thanh Quang Trinh, Masahiro Kudo, Hilde Hardtdegen, Thomas Schäpers, Toshi-kazu Suzuki, Physica E: Low-dimensional Systems and Nanostructures, 42(4), 2010, 1130-1133, http://dx.doi.org/10.1016/j.physe.2009.11.039
URI: http://hdl.handle.net/10119/10272
資料タイプ: author
出現コレクション:g10-1. 雑誌掲載論文 (Journal Articles)

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